Abstract
Ge-Sb-Te (GST) ternary alloy is the core material for phase-change memory (PCM). Compared with Ge2Sb2Te5 (GST-225), Ge-rich GST (GGST) has a higher crystallization temperature (about 400°C) and thereby an improved thermal stability. In this paper, we propose a methodology dedicated to studying the phase changes by operando transmission electron microscopy (TEM). The methodology combines focused ion beam (FIB) specimen preparation and injection of electrical pulses for in-situ studies. We show how the microstructure is correlated to the electrical switching dynamics in GGST nanobridges. The electrical pulse modification, the electrochemical migration, local current density, void formation and the corresponding switching mechanism are discussed.
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