On the thermoelectric power in n-channel inversion layers of ternary chalcopyrite semiconductors under magnetic quantization

Abstract

An attempt is made to investigate the thermoelectric power of the electrons under strong magnetic quantization in n-channel inversion layers of ternary chalcopyrite semiconductors at low temperatures, taking n-channel inversion layers on CdGeAs2 as examples, under both the weak and strong electric field limits, respectively. We have formulated the magneto-thermo power on the basis of newly derived two-dimensional electron energy spectra for both the limits by considering various types of anisotropies of the band parameters within the frame work of k■p formalism. It has been observed that, the magneto-thermo power decreases with increasing surface electric field and decreasing quantizing magnetic field in an oscillatory manner for both the limits. The crystal field parameter enhances the numerical magnitudes and the corresponding results for n-channel inversion layers of parabolic semiconductors have also been obtained as special cases from the generalized expressions under certain limiting conditions.