Abstract
An attempt is made to study the Einstein relations for the diffusivity-mobility ratios of the carriers in n-channel inversion layers on ternary chalcopyrite semiconductors under both weak and strong electric field limits, taking n-channel inversion layers on CdGeAs2 as an example. It is found, on the basis of newly derived 2D E-ks dispersion relations of the conduction electrons for both the limits by considering the various types of anisotropies in the energy band, that the ratios increase with increasing surface electric fields for both the limits and the theoretical results are in qualitative agreement with the suggested experimental method of determining the Einstein relation in degenerate semiconductors having arbitrary dispersion law. The corresponding well-known results for isotropic twoband Kane model are also obtained from the expressions derived.
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