On the gate capacitance of metal–oxide semiconductor structures in N-channel inversion layers on ternary chalcopyrite semiconductors

Abstract

An attempt is made to derive model expressions of the gate capacitance of metal–oxide semiconductor structures in n-channel inversion layers on ternary chalcopyrite semiconductors at low temperatures, taking n-channel inversion layers on CdGeAs2 as examples, under both the weak and strong electric field limits, respectively. It is found, on the basis of newly derived two-dimensional electron energy spectra within the frame work of k↘⋅p↘ formalism for both the limits by considering the anisotropies of the band parameters, that the gate capacitances increase with increasing surface electric field in an oscillatory manner and the crystal-field splitting parameter enhances the numerical values of the gate capacitance for both the limits. In addition, the corresponding well-known results for n-channel inversion layers on parabolic energy bands are also obtained from the generalized expressions.