Abstract
The detrimental effect of imprint, which can cause misreading problem, has hindered the application of ferroelectric HfO2. In this work, we present results of a comprehensive reliability evaluation of Hf0.5Zr0.5O2-based ferroelectric random access memory. The influence of imprint on the retention and endurance is demonstrated. Furthermore, a solution in circuity is proposed to effectively solve the misreading problem caused by imprint.
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