Abstract
In this chapter, the overview and scaling prospect of ferroelectric random access memory (FeRAM) are presented. First, the memory cell structure, material, operating principle, and current status of FeRAMs and chain FeRAMs are introduced. Second, several key techniques to achieve stable FeRAM operation and realize FeRAM scaling are described: (1) the scaling techniques to reduce bitline capacitance to obtain sufficient cell signal in scaled FeRAMs; (2) the dummy cell techniques to generate adequate reference voltage; and (3) the cell signal enhancement techniques to squeeze cell charge from capacitor and maximize cell signal. Third, the reliability of FeRAM and future cell directions using 3-dimensional capacitor and new approaches are discussed. Finally, the application of FeRAM to nonvolatile RAM cache in solid-state drive (SSD) / hard-disk drive (HDD) and performance improvement are demonstrated.
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