Abstract
Despite large efforts in research of HfO 2 -based ferroelectric (FE) random access memories (FRAM), mechanisms underlying the device behavior of and its reliability (premature degradation) are poorly understood. To tackle this issue, we used a multiscale modeling framework that allows investigating the interplay between the FE switching, defects and polycrystalline nature of the HfO 2 material. This multiscale model allows connecting the electrical performances of FE devices (e.g. switching) to the atomic material properties, including defects and morphology (e.g. material phase). We used this simulation platform to both study wake-up process and the device-to-device variability in different memory architectures, i.e. capacitor-based FRAM and ferroelectric tunnel junction (FTJ) and the ferroelectric FET (FeFET) subjected to high field program/erase stress.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
