Promising Engineering Approaches for Improving the Reliability of HfZrO x 2-D and 3-D Ferroelectric Random Access Memories

Abstract

The main challenge in ferroelectric (FE) random access memory (FRAM) scaling is to maintain a high polarization density on the vertical sidewall of 3-D FE capacitors. Two simple and effective methods-stress engineering and optimized interface orientation-are proposed to facilitate the preferential transition from the tetragonal to the orthorhombic phase for ferroelectricity. Four FE phase-progressive experiments were conducted for 2-D/3-D FRAMs with external stress sources and an interfacial layer (IL). Both 2-D and 3-D FRAMs show the wake-up free feature with the presence of both the external stressor and the optimized IL. To extract the sidewall polarization of 3-D FRAM, a set of testkeys was designed and studied. The 3-D FRAM shows an initial sidewall with good reliability and durability with P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</sub> = 18 μC/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and endurance of up to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> cycles. Furthermore, the retention test with the read mode of P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0,switch</sub> and P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1,switch</sub> at 85 °C was investigated, and the imprint effect was proved to be the main cause of retention loss.