On the Possibilities for Improving the Efficiency of Radiation in Heterostructures Based on IV-VI Semiconductors

Abstract

It is shown that, even in isoperiodic heterostructures, significant mismatch arises during the process of epitaxial growth because of interdiffusion of the components at the heteroboundary. As a result, nonradiative recombination at the formed defects increases, which significantly decreases the quantum yield of radiation. The heterostructures with active layers of pre- and post-inverse compositions are discussed. For overcoming the adverse effect of diffusion mismatch, it is proposed to bring the composition of the emitter closer to that of the active layer or to dope this layer with the impurities increasing the elastic limit.