Abstract
We investigated the formation of double Shockley-type stacking fault (DSF) and other types of stacking fault (SF) during a process of epitaxial growth by chemical vapor deposition on a highly nitrogen-doped 4H-SiC substrate. By comparing the bulk substrate before epitaxial growth and the substrate after growth with an epitaxial layer, bar-shaped SFs turned out to have formed during the process of epitaxial growth on the highly nitrogen-doped substrate. These bar-shaped SFs were identified to be DSFs and triple Shockley-type stacking faults by scanning transmission electron microscopy.
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