Chapter 7 - Quantum Well Heterostructure Lasers

Abstract

Publisher Summary Diode lasers began as simple diffused junction devices and have matured into a complex integration of modern epitaxial growth and sophisticated device processing technology, resulting in a wide range of laser structures designed to suit diverse optoelectronic applications. Quantum well heterostructure lasers are employed as sources for fiber-optic telecommunications, for optical data storage, for highly efficient pumping of solid-state lasers, and for the development of optoelectronic integrated circuits (OEICs). The incorporation of the semiconductor laser in such a wide variety of applications has led to the myriad material systems and device structures, each suiting a specific application. This chapter focuses on the background principles of quantum well heterostructure (QWH) diode laser operation and the important practical semiconductor QWH laser structures. It examines the physical fundamentals on which semiconductor lasers are based, emphasizing the contrast between bulk semiconductor lasers and QWH lasers. The design of actual QWH device structures is driven in part by the intended application and in part by the availability of suitable material systems and epitaxial growth processes.