Abstract
The generation and recovery of interface traps (N/sub IT/) during and after hot carrier injection stress is evaluated by the recently proposed two-dimensional (2-D) reaction diffusion (R-D) model. The power law time exponent (n) of N/sub IT/ generation as well as the magnitude of fractional and absolute recovery after the stress cannot be fully explained by considering only the spatial extent of broken /spl equiv/Si-H bonds, as is done by 2-D R-D model. Additional contribution due to broken /spl equiv/Si-O bonds also plays a major role in determining the overall N/sub IT/ generation and recovery behavior.
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