Numerical Analysis of Radiative Recombination and Reabsorption in GaAs/Si Tandem

Abstract

We demonstrate a numerical analysis of the device impact of photon reabsorption on single-junction GaAs and tandem GaAs/Si solar cells. A self-consistent optical–electrical model that considers nonideal losses within the devices is developed. For single-junction devices, we find that the impact of photon recycling on the voltage increases monotonically with the injection level. For record-level GaAs solar cells, the voltage boost is 33 mV under open-circuit conditions and 13 mV at the maximum power point. For tandem GaAs/Si solar cells, photon reabsorption moderates the sensitivity of tandem efficiency to both obvious parameters like absorber thickness and implicit parameters like shunt resistance ( $R_{{\rm sh}}$ ) and bulk lifetime. Considering luminescent coupling results in a GaAs top cell that is 9.5% thicker than without luminescent coupling. The tandem device is 50% more sensitive to $R_{{\rm sh}}$ changes in the GaAs cell than $R_{{\rm sh}}$ changes in the Si cell. The impact of the GaAs top-cell bulk lifetime on tandem efficiency is reduced by 61% if photon reabsorption is not considered. This integrated optoelectronic device model allows one quantification of the implicit effects of photon recycling and luminescent coupling on device parameters for GaAs/Si tandem, providing a valuable tool for high-performance device optimization.