Abstract
Strong luminescent coupling (LC) effect in a multijunction solar cell (MJSC) allows better current balance among its subcells. The temperature dependence of wafer-bonded III-V on silicon (Si) MJSCs with LC effect was investigated. Experimentally, this was explored through light current density–voltage (J – V) characteristic measurements, external quantum efficiency measurements, and laser beam-induced current mapping of InGaP/AlGaAs//Si triple junction solar cells at different cell temperatures. Measurement results were analyzed using a quasi-two-dimensional electro-optical prediction model for LC current production and bandgap temperature dependence models of various semiconductors. It was revealed that at lower temperatures, LC current production in the limiting Si bottom cell resulted in a larger absolute LC quantum efficiency difference. At 15°C, the absolute LC quantum efficiency difference calculated was 0.17%, which indicates potential current production improvement if vertical LC current is made uniform.
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