Abstract
Multi-functionality of a tunneling device was observed for the first time in nanoscale region. 70-nm tunneling devices with novel structure were successfully fabricated and analyzed. They act both as an n-channel surface junction tunneling (SJT) device and an n-channel tunneling field-effect transistor (TFET) depending on the bias conditions. P-channel device operation was not observed in this work since the doping profile of n+ region was not as abrupt as that of p+ region. When the fabricated device was operated as an n-channel SJT device, negative differential conductance (NDC) was clearly observed with a peak-to-valley current ratio (PVCR) of 1.2 at room temperature. On the other hand, in the case of the n-channel TFET operation, output current is saturated with the increase of the drain voltage.
Published Version
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