Novel Indium Arsenide double gate and gate all around nanowire MOSFETs for diminishing the exchange correlation effect: A quantum study

Abstract

In this paper we present novel double gate (DG) metal oxide semiconductor field effect transistor (MOSFET) and gate all around (GAA) nanowire metal oxide semiconductor field effect transistor (NWT) with a diminished exchange-correlation (Ex-Corr) effect. The key idea in this work is to use Indium Arsenide (InAs) semiconductor instead of Si. We have evaluated and compared different parameters of DG-MOSFET and GAA-NWTs such as threshold voltage, sub-threshold slope, drain induced barrier lowering and ON and OFF state currents from quantum view. Quantum mechanical transport approach based on non-equilibrium green’s function (NEGF) has been performed in the frame work of effective mass theory in consideration with Ex-Corr effect. This simulation method consists of three dimensional Poisson’s equation in which a Schrodinger equation is first solved in each slice of the device to find Eigen energies and Eigen functions. Then, a transport equation of electrons moving in the sub-bands is solved. This fully quantum method treats such effects as source-to-drain tunneling, ballistic transport, and quantum confinement on equal footing. The results show that only a few lowest Eigen sub-bands are occupied and the upper sub-bands can be safely neglected. Also, the interaction between electrons and Ex-Corr effect is diminished in the proposed structure.