Novel Hot-Carrier Degradation Mechanisms in the Lateral Insulated-Gate Bipolar Transistor on SOI Substrate

Abstract

The different hot-carrier degradation mechanisms of the lateral insulated-gate bipolar transistor on a silicon-on-insulator substrate (SOI-LIGBT) for different stress conditions have been experimentally investigated for the first time. For low V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> and high V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> , the hot hole injects and traps into the accumulation and the field oxide, particularly the bird's beak, which results in the decrease in the on-resistance R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> at the early stress stage. It is interesting that the decrease level of R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> in SOI-LIGBT is much more serious than that in the SOI laterally diffused metal-oxide-semiconductor with the same structure fully except for the doping type in the drain area. In addition, the buried oxide surface under the drain area also suffers from severe hot-carrier degradation. However, for high V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> and low V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> , only hot-electron injection into the gate oxide near the source side can be observed; there is no hot-carrier degradation to be found in both the field and buried oxides.