Comparisons of hot-carrier degradation behavior in SOI-LIGBT and SOI-LDMOS with different stress conditions

Abstract

The hot-carrier degradation behavior of the lateral insulated gate bipolar transistor on SOI substrate (SOI-LIGBT) and the lateral DMOS transistor on SOI substrate (SOI-LDMOS) with the same structure fully except for the doping type in drain area on different stress conditions is experimentally compared for the first time. For high V gs and low V ds, the degradation in SOI-LIGBT is much more serious than the SOI-LDMOS, which can be reflected by more positive V th shift. For low V gs and high V ds, there is also much severer hot-carrier degradation at the early stress stage in SOI-LIGBT according to the decrease level of R on. Experimental results have been verified by 2D TCAD numerical simulations.