Abstract
A novel model for hot-carrier degradation in a lateral insulated gate bipolar transistor (IGBT) device on SOI substrate (SOI-LIGBT) is presented. The setup of the model is based on the existing hot-carrier degradation mechanism in a SOI-LIGBT and assisted by a lateral DMOS device on SOI substrate (SOI-LDMOS) with completely the same structure except for the doping type in the drain area. The model parameters have been extracted by the degradation measurement results and the validity of the proposed model in a SOI-LIGBT has been also verified.
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