Abstract

Selective vapor deposition is an emerging field with several interesting application areas. In this paper the underlying principles of different selective deposition systems are introduced. The additional reactant fluxes during selective deposition in comparison with large-area deposition induced characteristic growth phenomena such as deposition-free distances, ridge growth, and new control regimes in the deposition process. The novel selective deposition processes are briefly discussed with particular reference to the additional reactant fluxes. Finally, a general outlook for the selective growth field is given.

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