Large-area selective thin film deposition by bias sputtering

Abstract

It has been demonstrated both theoretically and experimentally that selective sputter deposition of specific materials on the basis of purely ballistic processes is possible. The mechanisms of the selective deposition process have been studied in great detail using the dynamic code t-dyn. In particular, it has been shown that the selective bias sputter deposition process is closely related to the so-called sputter yield amplification effect. Further, it has been shown how such computer simulations are used to predict the conditions under which selective deposition can be achieved as well as to aid the selection of suitable materials and optimal operating conditions. Finally, it is experimentally demonstrated that (i) Al is selectively deposited on Si and not on W surfaces, and (ii) Ti is selectively deposited on Si and not on Pt surfaces, during bias sputter deposition of Al and Ti respectively with simultaneous Ar ion bombardment.