Abstract
In this paper an improved charge controlled model of undoped, lattice mismatched AlGaN / GaN MISHFET is presented .This model gives an accurate estimation of the 2-DEG sheet carrier concentration at the interface contributed entirely by spontaneous and piezoelectric polarization .The dependence of this sheet carrier density on Al composition and the insulator thickness is investigated in detail. Based on these developments an analytical current – voltage model incorporating Source/Drain parasitic resistance is presented. Also, the non-linear behavior of saturated Drain current is properly formulated and computation of transconductance is carried out for the same. Even without any intentional doping the proposed model exhibits fairly encouraging values of output current and conductance.
Published Version
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