Abstract
In recent years, the increase of processing speed requirements led to the demand to increase speed and reduce power consumption of memory devices, where sense amplifier is one of the most important components. This work provides the design idea and preliminary results of CMOS-memristive sense amplifier. The main objective of the paper is to modify $180 nm$ CMOS sense amplifier design by using memristive devices and improve the design in terms of on-chip area, power efficiency, temperature variation and speed. In the proposed design, NOT gates in the circuit were designed with memristors. The main aim of the paper is to check the effect of memristors on sense amplifier performance. The power consumption, on-chip area reduction, sensing delay and offset are reported in the paper.
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