Abstract
The nonvolatile memory transistor devices with embedded ruthenium (Ru) nanocrystals (NCs) are fabricated in a compatible way with conventional complementary metal-oxide semiconductor technology. The rapid thermal annealing for the whole gate stacks is used to form Ru NCs in pre-existed SiO2 matrix. Monocrystal Ru NCs with high density (3×1012 cm−2), small size (2–3 nm), and good uniformity both in spatial distribution and morphology are elaborated. A substantial memory window of 3.5 V is obtained and explained by the charging and effects of Ru NCs. The mechanisms of work function engineering are also discussed in this paper.
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