Abstract
Ruthenium (Ru) nanocrystals (NCs) embedded in SiO2 gate stacks are formed by rapid thermal annealing for the whole gate stacks and embedded in the memory structure, which is compatible with conventional CMOS technology. The devices exhibit a substantial and clockwise hysteresis in capacitance-voltage measurement. The Ru NCs exhibit high density (2 × 1012 cm−2), small size (2–4nm) and good uniformity both in spatial distribution and morphology. The charging and long-term retention performances are explained by the Coulomb Blockade phenomena and the asymmetric electron tunnel barrier between the Ru NCs and the Si substrate, respectively.
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