Abstract
At an applied voltage, anodic oxide alumina (AOA) films exhibit reproducible resistance switching between two states: a high-resistance state with insulating properties and a metallic low-resistance state. This resistance switching does not depend on the polarity of the applied voltage. A reduction in photoluminescence signal intensity of points switched to the low-resistance state was observed. The filamentary electronic model was employed to explain the resistance switching in the AOA films, which assumed that rupture and recovery of filaments are caused by the migration of electrons from and to filaments, respectively.
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