Abstract
The unipolar resistive switching characteristics of the amorphous LaLuO3 thin films deposited by pulsed laser deposition have been studied. Reliable and repeatable nonvolatile switching of the resistance of LaLuO3 films was obtained between two well defined states of low and high resistance with nearly constant resistance ratio ∼107 and non-overlapping switching voltages in the range of 0.66-0.83 V and 1.9-2.7 V respectively. The temperature dependent measurement revealed metallic and semiconducting behavior in low and high resistance states respectively. The switching between low and high resistance states was attributed to the change in the separation between oxygen vacancies in light of the correlated barrier hopping theory. The current conduction mechanism of the device in high-resistance state followed the Poole's law, whereas the conduction in low-resistance state was found to be dominated by percolation. The resistance of low and high resistance states of the film showed no obvious degradation for up to ∼104 seconds indicating good retention. The achieved characteristics of the resistive switching in LaLuO3 thin films seem to be promising for futuristic nonvolatile memory applications.
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