Abstract
A purely optical deep level photothermal spectroscopy has been developed for the defect-state characterization of semi-insulating (SI) GaAs wafers. The methodology utilizes near infrared sub-band-gap absorption to monitor the thermal emission of traps after an optical filling pulse, and the data are analyzed in a rate-window manner by a lock-in amplifier. The technique has been applied to a vertical-gradient-freeze grown SI-GaAs wafer, and the very first results are presented.
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