Abstract
We demonstrated a near-infrared transmittance setup for EL2 concentration mapping in undoped semi-insulating (SI) GaAs wafers. The light source was a power-stabilized laser diode (λ=1.3 µm) operating in the light emitting diode (LED) mode. The sensitivity of the apparatus was as low as 1014 cm-3 for typical commercial wafers 350 µm in thickness.
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