Abstract
A purely optical Deep Level Photo-Thermal Spectroscopy has been developed for the defect-state characterization of semi-insulating (SI) GaAs wafers. The methodology utilizes near infrared sub-bandgap absorption to monitor the thermal emission of traps after an optical filling pulse, and the data are analyzed in a rate-window manner by a lock-in amplifier. The technique has been applied to a VGF grown SI-GaAs wafer, and the very first results are presented.
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