Abstract
Nonalloyed ohmic contacts, with contact resistances as low as 9 μΩ cm2, are obtained to p++ GaP using Ni and Ti–Au. Very high p-type doping (5×1019 cm−3) is achieved in GaP using a growth temperature of 400 °C followed by an ex situ high-temperature rapid thermal anneal. The p-type dopant is beryllium and the films are grown by solid source molecular beam epitaxy equipped with a valved phosphorus cracker. A record high hole concentration (2×1019 cm−3) is reported in In0.49Ga0.51P by using a growth temperature of 350 °C.
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