Abstract
We demonstrate the controlled alteration of bulk defects in CdTe single crystals and polycrystalline films to achieve high bulk minority-carrier lifetime and p-type doping. Low-temperature photoluminescence measurements confirm that bulk defect chemistry is altered by inserting intentional extrinsic dopants. Group I dopants such as copper display a tradeoff where increased doping decreases lifetime. By incorporating a Group V dopant source such as phosphorus, bulk lifetime values of 20-40 ns with acceptor density values of 0.7-1.0×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">16</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> are obtained in single and polycrystalline CdTe crystals. This exceptional combination of long lifetime and high p-type doping in a manufacturable material provides a path to increase open-circuit voltage, fill factor, and efficiency in CdTe photovoltaic devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
