Abstract
The incorporation of carbon into In<sub>0.53</sub>Ga<sub>0.47</sub>As, In<sub>0.52</sub>Al<sub>0.48</sub>As and In<sub>0.52</sub>Al<sub>0.2</sub>Ga<sub>0.28</sub>As lattice matched to InP was investigated using carbon tetrabromide (CBr<sub>4</sub>) as the carbon source in Metalorganic Chemical Vapor Depositions growth. The parameters and growth conditions are optimized to get high p-type doping for photonic device applications. This is among the first few studies on C-doping in InAlAs and InAlGaAs, and the results show that the presence of Al also efficiently helps to obtain high p-type carbon doping.
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