Abstract
The mechanism of carbon incorporation into GaAs grown by metalorganic chemical vapor deposition is systematically investigated using carbon tetrabromide (CBr 4) as the carbon source. Hole concentration increases linearly as CBr 4 supply increases, decreases with elevating V III ratio, and is independent of trimethylgallium supply. These results are consistently explained by the model which assumes that competitive adsorption on the surface group-V site between the carbon source (CBr m ) and the arsenic source (AsH k ) dominates the carbon incorporation process. Hole concentration increases with increasing susceptor rotation speed while it decreases with increasing growth pressure. These results are explained by the hypothesis that CBr 4 supply to the growth surface is limited by its diffusion across the boundary layer.
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