Abstract
The growth and device characterization of an InGaP/GaAs double-heterojunction bipolar transistor is reported, the device is grown in a solid source molecular beam epitaxy system equipped with a valved phosphorus cracker. Various designs of base–collector (B–C) junction are used to eliminate the current blocking effect caused by the conduction band discontinuity. The results show that a chirped superlattice with a delta-doping layer at the B–C junction has the best dc characteristics. Both dc and microwave results of these devices are comparable to those obtained with other advanced growth techniques.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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