Abstract
The study of non-alloyed ohmic contacts based on Cr/Pt/Au is presented. Metallization was made on the epitaxial (Sample A) and ion-doped (Sample B) GaN layers. The deposited Au/Pt/Cr/n-GaN contacts exhibited an ohmic behavior with specific contact resistance 2.8×106 Ω·cm2 and 3.5×107 Ω·cm2 for the samples A and B respectively. The diode structures were made using Cr/Pt/Au system.
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