Abstract
In this study, a new copper alloy [Cu(AuTiNx)] film is developed for industrial applications, by cosputtering Cu and titanium gold (AuTi) targets on a barrierless Si substrate within a vacuum chamber sparsely filled with N2 gas. Through extensive tests conducted in this study, the new alloy film, after annealing at 720 °C for 1 h, shows good thermal stability and high adhesion strength to the substrate, without appreciable interactions between the film and the substrate. The new Cu(AuTiNx) alloy film also has adequate wetting for solder, shows good solderability, and has a dissolution rate lower than that of pure Cu by at least 1 order of magnitude, in addition to having a comparable consumption rate to that of Ni. The alloy film seems to be suitable for many industrial applications, e.g., barrierless Si metallization, interconnect manufacture, and as new wetting and diffusion layers for flip-chip solder joints in conventional metallurgy.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
