Abstract
In this study, I explore a new type of copper alloy, Cu(TiBNx), films by cosputtering Cu and TiB within an Ar/N2 gas atmosphere on Si substrates. The films are then annealed for 1 h in a vacuum environment at temperatures up to 700 °C. The annealed films exhibit not only excellent thermal stability and low resistivity but also little leakage current and strong adhesion to the substrates while no Cu/Si interfacial interactions are apparent. Within a Sn/Cu(TiBNx)/Si structure at 200 °C, the new alloy exhibits a minute dissolution rate, which is lower than that of pure Cu by at least one order of magnitude. Furthermore, the new alloy’s consumption rate is comparable to that of Ni commonly used in solder joints. The new films appear suitable for some industrial applications, such as barrierless Si metallization and new wetting and diffusion barrier layers required in flip-chip solder joints.
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