Abstract
In this study, a copper alloy, Cu(MnNx), film is developed by cosputtering Cu and Mn on a barrierless Si substrate within an Ar/N2 gas atmosphere. The resulting alloy film exhibits good thermal stability and adhesion to the substrate with no noticeable interactions between the film and the substrate after annealing at 700 °C for 1 h, indicating that the film is thermally stable. The alloy film shall be able to replace both the wetting and diffusion layers for the flip-chip solder joints in conventional under bump metallurgy to reduce the manufacturing cost. We also observe that the Cu(MnNx) alloy exhibits a solder ability comparable to that of pure Cu and a dissolution rate lower than that of pure Cu by at least one order of magnitude. The alloy's consumption rate is comparable to that of Ni, rendering the alloy a candidate material in both barrierless Si metallization and solder bump flip-chip application.
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