Abstract
A new copper alloy that shows fine thermal stability and adhesion to the substrate is developed in this study by cosputtering Cu, Ti, and Ir on a barrierless Si substrate within an Ar/N2 gas atmosphere to form a Cu(TiIrNx) film. To reduce manufacture cost, we can replace both the wetting and diffusion layers underneath flip-chip solder joints in conventional under bump metallurgy with this thermally stable film, which exhibits weak, if any, interactions between the film and the substrate after annealing at 700 °C for 1 h. The alloy film's dissolution rate is lower than that of pure Cu by at least one order of magnitude, with a fine solderability similar to that of pure Cu. The film developed in this study seems to be a good candidate material for barrierless Si metallization and/or flip-chip solder bump application, with a low consumption rate comparable to that of Ni.
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