Abstract
Hot wire (HW) cell method was applied to Si epitaxy and high-quality epitaxial Si films were obtained at a pressure of approximately 0.05 Torr. The growth rate increased linearly with increasing SiH 4 flow rate. It was found that Si epitaxy was possible for substrate temperatures ranging from 200 to 400°C. However, there was a critical thickness for epitaxy below 600°C.
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