Characterization and Comparison of Strained Si1-yCy Metal Oxide Semiconductor Field-Effect Transistor Grown by Gas-Source Molecular Beam Epitaxy and Hot Wire Cell Method

Abstract

Strained Si1-yCy metal oxide semiconductor field-effect transistors (MOSFETs) were fabricated by gas-source molecular beam epitaxy (GS-MBE) and the Hot Wire (HW) Cell method, and their electrical characteristics were compared. The strained Si1-yCy films were grown by GS-MBE at 600°C and by the HW-Cell method at 200°C. The electron mobility of the MOSFET fabricated by GS-MBE showed a large decrease while that fabricated by the HW-Cell method showed a slight decrease. It was considered that this difference was due to the difference in non-substitutional carbon content. We found that the increase in growth temperature caused the decrease in substitutional carbon content and increase in non-substitutional carbon content. These results indicated that lowering the growth temperature decreases the non-substitutional carbon content and improves the electrical characteristics of Si1-yCy films.