Abstract
The hot wire (HW) cell method has been newly developed and successfully applied to grow polycrystalline silicon films at low temperatures with a relatively high growth rate of 0.9–1.1 nm/s. In the HW cell method, mono silane (SiH4) is decomposed by reacting with a heated tungsten wire placed near the substrate. It is found that polycrystalline silicon films can be obtained at substrate temperatures of 175–400°C without hydrogen dilution when the deposition pressure is 0.1 Torr.
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