Abstract
Narrow two-dimensional electron gas (2DEG) channels have been fabricated for the first time on GaAs/Al0.3Ga0.7As sidewall interfaces by selective growth using metalorganic chemical vapor deposition (MOCVD). The 4-μm-wide 2DEG channels are formed on the {111}A facets by controlling the facet formation in the selective growth layers only through MOCVD growth conditions. The angular dependence of Shubnikov–de Haas oscillations has confirmed the existence of 2DEG on the {111}A facets.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
