Abstract
Growth of AlGaAs facets on a (001)GaAs substrate with SiO 2 gratings with 2 μm wide lines and spaces is performed using metalorganic chemical vapor deposition (MOCVD). Facet features strongly depend upon the grating direction of the (001) substrate, growth temperature ( T s), and AsH 3 partial pressure. The facet growth mechanisms are discussed using a simple model, in which the number of dangling bonds of As on the facet plane and the surface diffusion lengths of Ga and Al atoms are taken into account. Using these facet growth conditions, narrow two-dimensional electron gas (2DEG) channels are also fabricated by selective area growth on GaAs/AlGaAs sidewall interfaces.
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