Abstract
Typical non-volatile flash memory technology has been approaching its scalability limit and showing slow access time, and high power dissipation. Meanwhile, filamentary resistive RAM (ReRAM) offers scalability, low-voltage nanosecond writing and therefore a low power profile; programming techniques also allow for beyond-binary applications. Here we stimulate our intrinsic switching TiN/SiOx/TiN (x<2) ReRAM devices using nanosecond pulses and look at aspects of their electrical response. Simplified programmers appear possible thanks to dynamic impedance mismatch between the programmer and the device under test; identical pulse sequences switch devices between two or more states. Such mismatch also allows us to track the electroforming process and confirm it occurs on the nanosecond timescale. Additionally, pulses of appropriate timing allow devices to enter temporary states. Behavior reminiscent of neuronal synapses (potentiation, depression and short-term memory) is therefore observed in our devices showing great potential for integration into novel parallel hardware neural networks.
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