Abstract
Abstract The misfit dislocation multiplication process which was observed for the first time in InxGa1−xAs/GaAs strained-layer superlattices (with x < 0·20) (A. Lefebvre, C. Herbeaux, C. Bouillet and J. Di Persio, 1991, Phil. Mag. Lett., 63, 23) is re-examined in detail in strained-layer superlattices and in metamorphic structures. Transmission electron microscopy reveals that this process is based on the occurrence of interactions between perpendicular 60° misfit dislocations with identical Burgers vectors and the subsequent glide of V inclined tips into the substrate, not much different from another multiplication process proposed in the GexSi1−x/Si system (F. K. LeGoues, B. S. Meyerson, J. F. Morar and P. D. Kirchner, 1992, J. appl. Phys., 71, 4230). The dissimilarity between the two processes is essentially due to differences in the mobilities of the dislocation segments constituting these inclined tips. In the GexSi1−x/Si system, a symmetrical glide of V inclined tips is observed whereas an asymmetri...
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