Abstract
Strained-layer superlattices (SLSs) have been used extensively to modify the threading dislocation behavior in metamorphic semiconductor device structures, and have even been utilized as “dislocation filters.” However, up to the present time the application of SLSs in metamorphic structures has been impeded by the lack of detailed physical models for their behavior. In this work we apply a “weaving and jogging” model for dislocation interactions in ZnSSe SLSs to study their expected behavior and the dependence on the SLS design (placement, compositions, thicknesses, and growth conditions). Based on this study we make recommendations for the use of SLSs in the modification of threading dislocation behavior in ZnSSe/GaAs (001) device structures.
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