Abstract

Strained-layer superlattices (SLSs) have been used extensively to modify the threading dislocation behavior in metamorphic semiconductor device structures, and are sometimes referred to as “dislocation filters.” However, up to the present time the application of SLSs in metamorphic structures has been impeded by the lack of detailed physical models for their behavior. In this work we apply a “weaving” and “jogging” model for dislocation interactions in ZnSSe SLSs to study their expected behavior and the dependence on the SLS design (placement, compositions, thicknesses, and growth conditions).

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