Misfit dislocations in In0.15Ga0.85As/GaAs strained-layer superlattices

Abstract

The misfit dislocation structure in In0.15Ga0.85As/GaAs strained-layer superlattices has been characterized by transmission electron microscopy. Most of the dislocations are 60° dislocations confined to the buffer/strained-layer superlattice interface. This interface also contains sources that emit glissile dislocations into the {111} planes. These dislocations develop into the buffer layer and the substrate but hardly into the strained-layer superlattice. The sources are connected to the interactions between misfit dislocations in the buffer/superlattice interface.